Bokyeom Kim


  • 2018~present: KAIST, Ms-Ph.D combined student, Electrical Engineering
  • 2013~2017: SungKyunKwanUniversity, BS, Electronic and Electrical Engineering


2D Material

Random Dopant Fluctuation

Machine Learning

Stressed-induced Leakage Current

Other Research interests


  • Journal
 1. "Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles-based Approach", Bokyeom  Kim, Junbeom Seo and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 463-468, Feb. 2020.(Link)
  • Selected Conference

    "Si-based promising FETs : Si/GaP FETs" 김보겸, 신민철, 제 26회 반도체 학술대회, 횡성, 2019. (Oral Presentation)
    2."An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures," Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, IWCN2019, Evanston, IL, USA, 2019 (Oral Presentation)
  • 3. "Device Performance of MXene FETs," Bokyeom Kim and Mincheol Shin, AWAD, Busan, Korea, 2019. (Oral Presentation)
  • 4."Machine-Learning-based Device Optimization with TCAD" 김보겸, 신민철, 제 27회 반도체 학술대회, 정선, 2020. (Oral Presentation,특별세션)
  • 5. "Efficient machine-learning-based optimization of 3-nm node nanosheet FETs," Bokyeom Kim, and Mincheol Shin, IWCN2021, Daejeon, Korea, Virtual conference, 2021 (Short Oral Presentation)
  • Awards
1. Ministry Award, EDISON NanoPhysics Competition, Ministry of Science and Technology, 2019
2. Award for Excellence (outstanding poster), Samsung-KAIST cooperation meeting, Samsung Electronics Co., Ltd, 2019
3. Ministry Award, EDISON NanoPhysics Competition, Ministry of Science and Technology, 2020
  • Patent