Bokyeom Kim



 Education

  • 2018~present: KAIST, Ms-Ph.D combined student, Electrical Engineering
  • 2013~2017: SungKyunKwanUniversity, BS, Electronic and Electrical Engineering



Research


2D Material

Random Dopant Fluctuation

Machine Learning

Stressed-induced Leakage Current


Other Research interests




Publication

  • Journal
  • Selected Conference

    1.
    "Si-based promising FETs : Si/GaP FETs" 김보겸, 신민철, 제 26회 반도체 학술대회, 횡성, 2019. (Oral Presentation)
    2."An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures," Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, IWCN2019, Evanston, IL, USA, 2019 (Oral Presentation)
  • 3. "Device Performance of MXene FETs," Bokyeom Kim and Mincheol Shin, AWAD, Busan, Korea, 2019. (Oral Presentation)
  • Patent