• 2018~present: KAIST, Ms-Ph.D combined student, Electrical Engineering
• 2013~2017: SungKyunKwanUniversity, BS, Electronic and Electrical Engineering

Research

2D Material

Random Dopant Fluctuation

Machine Learning

Stressed-induced Leakage Current

• Selected Conference
• • 
    
  1."Si-based promising FETs : Si/GaP FETs" 김보겸, 신민철, 제 26회 반도체 학술대회, 횡성, 2019. (Oral Presentation)
  
  2."An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures," Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, IWCN2019, Evanston, IL, USA, 2019 (Oral Presentation)
• 3. "Device Performance of MXene FETs," Bokyeom Kim and Mincheol Shin, AWAD, Busan, Korea, 2019. (Oral Presentation)
• 4."Machine-Learning-based Device Optimization with TCAD" 김보겸, 신민철, 제 27회 반도체 학술대회, 정선, 2020. (Oral Presentation,특별세션)
• 5. "Efficient machine-learning-based optimization of 3-nm node nanosheet FETs," Bokyeom Kim, and Mincheol Shin, IWCN2021, Daejeon, Korea, Virtual conference, 2021 (Short Oral Presentation)

• Awards

• Patent