2013~2017: SungKyunKwanUniversity, BS, Electronic and Electrical Engineering
Research
2D Material
Random Dopant Fluctuation
Machine Learning
Stressed-induced Leakage Current
Other Research interests
Publication
Journal
1. "Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles-based Approach", Bokyeom Kim, Junbeom Seo and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 463-468, Feb. 2020.(Link)
Selected Conference
1."Si-based promising FETs : Si/GaP FETs" 김보겸, 신민철, 제 26회 반도체 학술대회, 횡성, 2019. (Oral Presentation)
2."An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures," Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, IWCN2019, Evanston, IL, USA, 2019 (Oral Presentation)
3. "Device Performance of MXene FETs," Bokyeom Kim and Mincheol Shin, AWAD, Busan, Korea, 2019. (Oral Presentation)
4."Machine-Learning-based Device Optimization with TCAD" 김보겸, 신민철, 제 27회 반도체 학술대회, 정선, 2020. (Oral Presentation,특별세션)
Awards
1.Ministry Award, EDISON NanoPhysics Competition, Ministry of Science and Technology, 2019
2. Award for Excellence (outstanding poster), Samsung-KAIST cooperation meeting, Samsung Electronics Co., Ltd, 2019
3.Ministry Award, EDISON NanoPhysics Competition, Ministry of Science and Technology, 2020
