Hyo-Eun Jung

 junghe@kaist.ac.kr


 Education

  • 2013~ present: KAIST Ph. D Candidate
  • 2011~2013 : KAIST, MS, EE
  • 2007~2011 : Hanyang University, BS, EE
  • 2004~2007 : Hearyong High School

Research


Analysis of Realistic Strain Effects on Quantum transport in Nanoscale Devices based on the Density Functional Theory

    

     Introduction
  • Strain engineering has become a compulsory technique to give an enhanced performance in nanoscale MOSFET
    devices such as ultra-thin-body(UTB) FET, FinFET, and nanowire FET. 
  • Nanoscaled-devices can withstand large non-intentional strains due to fabrication processing steps (e.g. oxidation,
    thermal stress) and also can be stretched/compressed on purpose (e.g. SiGe S/D, mechanical stretching) in
    flexible electronics.
  • Recently, intensive research effort has been devoted to investigate the strain effects on the III-V/high-k structure 
    as alternatives to Si-based channel material devices.

    Approach
  • Take all device circumstances into account by first-principle calculation based on the density functional theory, 
    the device structure is modeled in atomistic scale and optimized in the most stable condition.
  • The band structure modulation with strain on crystal orientation and device geometry is investigated.
  • Combining density functional theory and tight-binding method, the realistic strain effects and confinement on both
    electrons and holes are described.
  • The full quantum electron/hole transport characteristics of MOSFET devices utilizing practical strain effects are investigated by employing non-equilibrium Green’s function.


Publications

  • Journal
  1. Hyo-Eun Jung and Mincheol Shin, "Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors," Journal of Applied Physcis, vol. 118, pp. 195703, 2015
  2. Hyo-Eun Jung and Mincheol Shin, "Surface roughness limited mean free path in silicon nanowire field effect transistors," IEEE TED, vol. 60, no. 6, pp.1861-1866, 2013.
  • Selected Conference
  1. Byung-Hyun Kim, Seungchul Kim, Hyo-Eun Jung, YongChae Chung, Mincheol Shin, and Kwang-Ryeol Lee, "Multi-scale approach for roughness effects of Si-SiO2 nanowire interface on electronic transport," ICCP, Singapore, 2015.
  2. Mincheol Shin and Hyo-Eun Jung, "Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects," ISPSA, Jeju, Korea, 2014.
  3. Junbeom Seo, Pooja Srivastave, Jaehyun Lee, Hyo-Eun Jung, Seungchul Kim, Kwang-Ryeol Lee, and Mincheol Shin, "Effects of strain for nanowire schottky barrier p-MOSFETs," ISPSA, Jeju, Korea, 2014.
  4. Hyo-Eun Jung, Woo Jin Jeong, and Mincheol Shin, "A Study of performance enhancement in uniaxial stressed silicon nanowire field effect transistors," SISPAD, Yokohama, Japan, 2014.
  5. Hyo-Eun Jung and Mincheol Shin, "NEGF approach to surface roughness limited mean free path in silicon nanowire FETs," NMDC, Tainan, Taiwan, 2013.
  6. Hyo-Eun Jung and Mincheol Shin, "Full quantum simulations of silicon schottky barrier nanowires with surface roughness scattering," NanoKorea, 2013.
  7. Hyo-Eun Jung and Mincheol Shin, "Surface roughness effects in schottky barrier tunneling transistors: comparative study against ohmic contact devices," KCS, 2012.
  8. Byung-Hyun Kim, Hyo-Eun Jung, Yong-Chae Chung, Mincheol Shin, and Kwang-Ryeol Lee, "Multi-scale simulation of interfacial roughness effects in silicon nanowire," SISPAD, Denver, USA, 2012.
  9. Hyo-Eun Jung and Mincheol Shin, "Non-equilibrium Green's function approach to surface-roughness-limited mobility in silicon nanowire field effect transistors," KCS, 2011.