Woojin Jeong

 wjjeong@kaist.ac.kr

Education

  • 2014~ present: KAIST Ph. D Candidate
  • 2012~2014 : KAIST, MS, EE
  • 2007~2012 : Hanyang University, BS, EE
  • 2004~2007 : Ewha Womans University High School


Research

 Topic: Reduced basis transformation for efficient device simulation based on the atomistic NEGF formalism

  • As CMOS technology has enable scaled down transistors, atomistic level modeling in the nanoscale devices became important.
  • However, it is difficult to directly apply the atomistic simulation method to the device transport problem because it takes enormous computational burden.
  • Reduced basis transformation (RBT) has been developed to significantly reduce the size of atomistic Hamiltonian matrix. 
  • By introducing an RBT technique, quantum transport properties in practical scaled devices is investigated.

Publication

  • Journal
  1. Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon, Min Gyu Park, Young Gwang Yoon, Byeong Woon Hwang, Woo Young Choi, Mincheol Shin, and Seok-Hee Lee, "Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistors with a Symmetrically Arranged Double Gate", Semiconductor Science and Technology, vol 30, no 3, pp. 035021, March 2015.
  2. Mincheol Shin, Woo Jin Jeong, and Jaehyun Lee, "Density Functional Theory Based Simulations of Silicon Nanowire Field Effect Transistors", Journal of Applied Physics, vol. 119, no. 15, pp. 154505, Apr. 2016.
  3. Jae Hur, Woo Jin Jeong, Mincheol Shin and Yang-Kyu Choi, "Schottky Tunneling Effects in a Tunnel FET", IEEE Transactions on Electron Devices, vol 64, no 12, pp. 5223 - 5229 , Dec. 2017
  4. Joon-Ho Lee, Woo Jin Jeong, Junbeom Seo, and Mincheol Shin, "Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates", Solid State Electronics, vol. 139, pp. 101 - 108, Jan. 2018
  5. Doo Hyung Kang, Jaehyun Lee, Woo Jin Jeong, and Mincheol Shin, "Spin torque nano-oscillators directly integrated on a MOSFET", IEEE Transactions on Nanotechnology, vol. 17, no. 1, pp. 122 - 127, Jan. 2018
  6. Doo Hyung Kang, Woo Jin Jeong, Jaehyun Lee, and Mincheol Shin, "Serially connected spin torque nano-oscillators integrated directly on a metal-oxide-semiconductor field-effect transistor", IEEE Transactions on Magnetics, vol. 55, no. 4, pp. 1400506, Apr. 2019 .


  • Conference
  1. Jaehyun Lee, Woo Jin Jeong, Doo Hyung Kang, and Mincheol Shin, "Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs", SNW, Hawaii, USA, 2014.
  2. Jaehyun Lee, Doo Hyung Kang, Woo Jin Jeong, and Mincheol Shin, "Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior",Nano-Korea, Seoul, Korea, 2014.
  3. Hyo-Eun Jung, Woo Jin Jeong, and Mincheol Shin, "A Study of Performance in Uniaxial Stressed Silicon Nanowire Field Effect Transistors", SISPAD, Yokohama, Japan, 2014.
  4. Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon, Mincheol Shin, and Seok Hee Lee, "Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate", ISPSA, Jeju, Korea, 2014.
  5. Woo Jin Jeong, Jaehyun Lee, Seungchul Kim, Kwang-Ryeol Lee, and Mincheol Shin, "Device simulation based on DFT-NEGF using equivalent transport model",  ICCP-9, Singapore, 2015.
  6. Woo Jin Jeong, and Mincheol Shin, "Efficient atomistic simulation of InAs ultra-thin body tunnel FETs based on the TB-NEGF method", Nano Korea, Seoul, Korea, 2016.
  7. Joon Ho Lee, Woo Jin Jeong, and Mincheol Shin, "Quantum transport simulation of a cylindrical multishell Silicon-Nanowire Trnasistor based on Wigner transport equation", Nano Korea, Seoul, Korea, 2016. (Best Poster Award)
  8. Woo Jin Jeong, Junbeom Seo, and Mincheol Shin, "Efficient TB-NEGF Simulations of Ultra-Thin Body Tunnel FETs", SISPAD, Nuremberg, Germany, 2016.
  9. Mincheol Shin, Woo Jin Jeong, and Junbeom Seo, "First Principles Based NEGF Simulations of Si NAnowire FETs", SISPAD, Nuremberg, Germany, 2016. (Best Poster Award)
  10. Doo Hyung Kang, Woo Jin Jeong, Jaehyun Lee, and Mincheol Shin, "High Power Spin Torque Nano-Oscillators directly integrated on a MOSFET: Serially Connected Spin Torque Nano-Oscillators", AWAD, Gyeongju, Korea, 2017
  11. 정우진, 이재현, 신민철, "DFT-NEGF Simulation of Si Nanowire Transistors using Reduced-Sized Hamiltonian", 제22회 반도체 학술대회, 인천, 2015.
  12. 정우진, 신민철, "Atomistic Simulation of InAs Tunnel FETs based on TB-NEGF Method", 제23회 반도체 학술대회, 정선, 2016.
  13. 박상천, 서준범, 정우진, 신민철, "Simulation Study of Double-Gate Tunnel Dielectric based Tunnel FET", 제23회 반도체 학술대회, 정선, 2016.


  • Patent
  1. (US, Registered) Mincheol Shin, Jaehyun Lee, Doo Hyung Kang, Woo Jin Jeong, "Negative capacitance logic device, clock generator including the same and method of operating clock generator", US 9,484,924 B2, Nov. 2016 
  2. (US, Applied) Mincheol Shin, Woo Jin Jeong, Jaehyun Lee, "Method for simulating characteristics of semiconductor device", 15949268, Apr. 2018 
  3. (KOR, Registered) 이석희, 김태균, 문정민, 정우진, 황병운, "Ultra-Thin Fin 구조와 그 형성 방법 및 Ultra-Thin FinFET과 그 제조 방법", 10-1367988, Feb. 2014 
  4. (KOR, Registered) 이석희, 김태균, 문정민, 정우진, 황병운, "Ultra-Thin FinFET 제조 방법 및 이를 이용하여 제조된 Ultra-Thin FinFET", 10-1367989, Feb. 2014
  5. (KOR, Registered) 이석희, 김태균, 문정민, 정우진, 황병운, "수직 구조를 갖는 독립적 및 대칭적인 이중 게이트 구조를 이용한 전자-정공 이중층 터널 전계 효과 트랜지스터 및 그 제조 방법", 10-1368191, Feb. 2014
  6. (KOR, Registered) 이석희, 김태균, 문정민, 정우진, "독립적 및 대칭적인 이중 게이트 구조를 이용한 전자-정공 이중층 터널 전계 효과 트랜지스터 및 그 제조 방법", 10-1402697, May 2014
  7. (KOR, Registered) 이석희, 김태균, 문정민, 정우진, 황병운, "독립적으로 구동이 가능하고 다른 일함수를 가지는 이중 게이트 구조를 포함하는 전자-정공 이중층 터널 전계 효과 트랜지스터 및 그 제조 방법", 10-1424755, July 2014
  8. (KOR, Registered) 이석희, 정현호, 최지훈, 정우진, "금속 촉매 식각 방법을 이용한 수직 나노구조를 포함하는 광학기기 및 그 제조 방법", 10-1438797, Sep. 2014
  9. (KOR, Registered) 신민철, 이재현, 강두형, 서준범, 정우진, "네거티브 커패시턴스 로직 디바이스, 이를 포함하는 클럭 생성기 및 클럭생성기의 동작 방법", 10-1701145, Jan. 2017 
  10. (KOR, Registered) 신민철, 정우진, 이재현, "반도체 소자의 특성 시뮬레이션 방법", 10-1880192, July 2018