Topic: Reduced basis transformation for efficient device simulation based on the atomistic NEGF formalism
As CMOS technology has enable scaled down transistors, atomistic level modeling in the nanoscale devices became important.
However, it is difficult to directly apply the atomistic simulation method to the device transport problem because it takes enormous computational burden.
Reduced basis transformation (RBT) has been developed to significantly reduce the size of atomistic Hamiltonian matrix.
By introducing an RBT technique, quantum transport properties in practical scaled devices is investigated.
Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon, Min Gyu Park, Young Gwang Yoon, Byeong Woon Hwang, Woo Young Choi, Mincheol Shin, and Seok-Hee Lee,"Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistors with a Symmetrically Arranged Double Gate", Semiconductor Science and Technology, vol 30, no 3, pp. 035021, March 2015.
Mincheol Shin, Woo Jin Jeong, and Jaehyun Lee, "Density Functional Theory Based Simulations of Silicon Nanowire Field Effect Transistors", Journal of Applied Physics, vol. 119, no. 15, pp. 154505, Apr. 2016.
Jaehyun Lee, Woo Jin Jeong, Doo Hyung Kang, and Mincheol Shin,"Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs", SNW, Hawaii, USA, 2014.
Jaehyun Lee, Doo Hyung Kang, Woo Jin Jeong, and Mincheol Shin, "Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior",Nano-Korea, Seoul, Korea, 2014.
Hyo-Eun Jung, Woo Jin Jeong, and Mincheol Shin, "A Study of Performance in Uniaxial Stressed Silicon Nanowire Field Effect Transistors", SISPAD, Yokohama, Japan, 2014.
Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon, Mincheol Shin, and Seok Hee Lee, "Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate", ISPSA, Jeju, Korea, 2014.
Woo Jin Jeong, Jaehyun Lee, Seungchul Kim, Kwang-Ryeol Lee, and Mincheol Shin, "Device simulation based on DFT-NEGF using equivalent transport model", ICCP-9, Singapore, 2015.
Woo Jin Jeong, and Mincheol Shin, "Efficient atomistic simulation of InAs ultra-thin body tunnel FETs based on the TB-NEGF method", Nano Korea, Seoul, Korea, 2016.
Joon Ho Lee, Woo Jin Jeong, and Mincheol Shin, "Quantum transport simulation of a cylindrical multishell Silicon-Nanowire Trnasistor based on Wigner transport equation", Nano Korea, Seoul, Korea, 2016.
Woo Jin Jeong, Junbeom Seo, and Mincheol Shin, "Efficient TB-NEGF Simulations of Ultra-Thin Body Tunnel FETs", SISPAD, Nuremberg, Germany, 2016.
Mincheol Shin, Woo Jin Jeong, and Junbeom Seo, "First Principles Based NEGF Simulations of Si NAnowire FETs", SISPAD, Nuremberg, Germany, 2016.
정우진, 이재현, 신민철, "DFT-NEGF Simulation of Si Nanowire Transistors using Reduced-Sized Hamiltonian", 제22회 반도체 학술대회, 인천, 2015.
정우진, 신민철, "Atomistic Simulation of InAs Tunnel FETs based on TB-NEGF Method", 제23회 반도체 학술대회, 정선, 2016.
박상천, 서준범, 정우진, 신민철, "Simulation Study of Double-Gate Tunnel Dielectric based Tunnel FET", 제23회 반도체 학술대회, 정선, 2016.