Yongsoo Ahn



  • 2014. 09 ~              : KAIST Ph. D Candidate, Electrical Engineering
  • 2012. 02 ~ 2014. 08 : KAIST, MS, Electrical Engineering
  • 2005. 03 ~ 2012. 02 : Sungkyunkwan University, BS, Electronic & Electrical Engineering
  • 2002. 03 ~ 2005. 02 : Changwon Yongho High School


     First-principles-based quantum transport simulations of 2D semiconductor FETs

  • 2D Semiconductors
    • Layered structure, weak inter-layer interaction (Van der Waals), strong intra-layer interaction (covalent)
    • Non-zero bandgap, high mobility in nanoscale dimension (uniform surface)
    • Example: transition metal dichalcogenides, black phosphorus, metal monochalcogenide
  • Simulation approach
    • Device modeling: equilibrium DFT Hamiltonian
      • Device is modeled in atomistic level via density functional theory (DFT) simulations.
      • Equilibrium DFT Hamiltonians are extracted.

    • Quantum transport simulation: self-consistent calculation between NEGF - Poisson
      • The extracted DFT Hamiltonians are imported into our in-house tool that calculates non-equilibrium Green's function (NEGF) and solves Poisson equation.

Other Research Interests

  • Quantum transport simulation with consideration of issues in digital IC (e.g., dark silicon, thermal issue, etc.)


  • Journal
    1. "First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide Field-Effect Transistors in the Ballistic Limit," Yongsoo Ahn and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2129 - 2134, May 2017 (Link)
  • Selected Conference
    1. Yongsoo Ahn and Mincheol Shin, "Performance comparison between silicon and transition metal dichalcogenides field-effect transistors," AWAD, Jeju, Republic of Korea, Jun. 2015.

    2. 안용수, 신민철, "First-principles-based quantum transport calculations of 2D material field-effect transistors," 한국 반도체 학술대회, 정선, 2월. 2016.

    3. Yongsoo Ahn and Mincheol Shin, "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors," International Vacuum Congress, Busan, Republic of Korea, Aug. 2016.