• 2014. 09 ~              : KAIST Ph. D Candidate, Electrical Engineering
• 2012. 02 ~ 2014. 08 : KAIST, MS, Electrical Engineering
• 2005. 03 ~ 2012. 02 : Sungkyunkwan University, BS, Electronic & Electrical Engineering
• 2002. 03 ~ 2005. 02 : Changwon Yongho High School

Research

     Quantum transport simulations of 2D-semiconductor-based transistors

• Properties of 2D Semiconductors
• Layered structure, weak inter-layer interaction, strong intra-layer interaction, dangling-bond-free
• Non-zero bandgap, great mobility in nanoscaled dimension
• Example: transition metal dichalcogenides, black phosphorus, metal monochalcogenide, etc.

• Simulation approach
• Quantum transport simulations based on non-equilibrium Green's function are employed
• Hamiltonians based on tight-binding, maximally localized Wannier function, and density functional theory are used

• Journal

1. "First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide Field-Effect Transistors in the Ballistic Limit," Yongsoo Ahn and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2129 - 2134, May 2017 (Link)

• Selected Conference
1. Yongsoo Ahn and Mincheol Shin, "Performance comparison between silicon and transition metal dichalcogenides field-effect transistors," AWAD, Jeju, Republic of Korea, Jun. 2015.
   
   
2. 안용수, 신민철, "First-principles-based quantum transport calculations of 2D material field-effect transistors," 한국 반도체 학술대회, 정선, 2월. 2016.
   
   
3. Yongsoo Ahn and Mincheol Shin, "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors," International Vacuum Congress, Busan, Republic of Korea, Aug. 2016.