Yongsoo Ahn

 ys.ahn8625@gmail.com


Education

  • 2014. 09 ~              : KAIST Ph. D Candidate, Electrical Engineering
  • 2012. 02 ~ 2014. 08 : KAIST, MS, Electrical Engineering
  • 2005. 03 ~ 2012. 02 : Sungkyunkwan University, BS, Electronic & Electrical Engineering
  • 2002. 03 ~ 2005. 02 : Changwon Yongho High School


Research


     Quantum transport simulations of 2D-semiconductor-based transistors

  • Properties of 2D Semiconductors
    • Layered structure, weak inter-layer interaction, strong intra-layer interaction, dangling-bond-free
    • Non-zero bandgap, great mobility in nanoscaled dimension
    • Example: transition metal dichalcogenides, black phosphorus, metal monochalcogenide, etc.
  • Simulation approach
    • Quantum transport simulations based on non-equilibrium Green's function are employed
    • Hamiltonians based on tight-binding, maximally localized Wannier function, and density functional theory are used

Other Research Interests

  • Quantum transport simulation with consideration of issues in digital IC (e.g., dark silicon, thermal issue, etc.)

Publications

  • Journal
    1. "First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide Field-Effect Transistors in the Ballistic Limit," Yongsoo Ahn and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2129 - 2134, May 2017 (Link)
  • Selected Conference
    1. Yongsoo Ahn and Mincheol Shin, "Performance comparison between silicon and transition metal dichalcogenides field-effect transistors," AWAD, Jeju, Republic of Korea, Jun. 2015.

    2. 안용수, 신민철, "First-principles-based quantum transport calculations of 2D material field-effect transistors," 한국 반도체 학술대회, 정선, 2월. 2016.

    3. Yongsoo Ahn and Mincheol Shin, "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors," International Vacuum Congress, Busan, Republic of Korea, Aug. 2016.