Non-zero bandgap, high mobility in nanoscale dimension (uniform surface)
Example: transition metal dichalcogenides, black phosphorus, metal monochalcogenide
Simulation approach
Device modeling: equilibrium DFT Hamiltonian
Device is modeled in atomistic level via density functional theory (DFT) simulations.
Equilibrium DFT Hamiltonians are extracted.
Quantum transport simulation: self-consistent calculation between NEGF - Poisson
The extracted DFT Hamiltonians are imported into our in-house tool that calculates non-equilibrium Green's function (NEGF) and solves Poisson equation.
Other Research Interests
Quantum transport simulation with consideration of issues in digital IC (e.g., dark silicon, thermal issue, etc.)
Publications
Journal
"First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide Field-Effect Transistors in the Ballistic Limit," Yongsoo Ahn and Mincheol Shin, IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2129 - 2134, May 2017 (Link)
Selected Conference
Yongsoo Ahn and Mincheol Shin, "Performance comparison between silicon and transition metal dichalcogenides field-effect transistors," AWAD, Jeju, Republic of Korea, Jun. 2015.
안용수, 신민철, "First-principles-based quantum transport calculations of 2D material field-effect transistors," 한국 반도체 학술대회, 정선, 2월. 2016.
Yongsoo Ahn and Mincheol Shin, "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors," International Vacuum Congress, Busan, Republic of Korea, Aug. 2016.