Spintronics
The effort on commercialization of single spin torque oscillator(STO) has reached threshold due to its low output power and wide line width. Recently, synchronization of STOs by fabricating in arrays has been studied to breakthrough these limitations. ⊙ MTJ Macroscopic simulation Considerable interests in spintronic devices, especially spin-transfer torque magnetic random access memory (STT-MRAM) and spin torque nano-oscillators (STNOs) have brought remarkable developments. For the numerical study of spin transfer effects inside the core part, called magnetic tunnel junction (MTJ), we analyze nanoscale system using nonequilibrium Green’s function (NEGF), which is known as the most powerful method to describe submicron devices. Landau-Lifshitz-Gilbert (LLG) equation determines dynamics of free magnetic layer. Combining NEGF formalism and LLG equation, self-consistent calculation describes consecutive change of magnetization vector. |