Simulators for analyzing electronic transport characteristics of practical
nano-electronic devices are being developed. Various methods such as k¡¤p,
tight-binding, NEGF, Monte
Carlo etc are used.

Simulation tools for novel thermoelectronic devices are being developed via quantum mechanical approach in order to achievethe optimized structure andbetter efficiency.

Nano-spintronics RF devices by integrating
NT and IT state-of-the-art technologies and implementing a spintronic nanoradio
with remarkable characteristics are
being studied.