Hyo-Eun Jung



  • 2018~         : Samsung Electronics
  • 2013~2018 : KAIST Ph. D
  • 2011~2013 : KAIST, MS, EE
  • 2007~2011 : Hanyang University, BS, EE
  • 2004~2007 : Hearyong High School


Analysis of Realistic Strain Effects on Quantum transport in Nanoscale Devices based on the Density Functional Theory


  • Strain engineering has become a compulsory technique to give an enhanced performance in nanoscale MOSFET
    devices such as ultra-thin-body(UTB) FET, FinFET, and nanowire FET. 
  • Nanoscaled-devices can withstand large non-intentional strains due to fabrication processing steps (e.g. oxidation,
    thermal stress) and also can be stretched/compressed on purpose (e.g. SiGe S/D, mechanical stretching) in
    flexible electronics.
  • Recently, intensive research effort has been devoted to investigate the strain effects on the III-V/high-k structure 
    as alternatives to Si-based channel material devices.

  • Take all device circumstances into account by first-principle calculation based on the density functional theory, 
    the device structure is modeled in atomistic scale and optimized in the most stable condition.
  • The band structure modulation with strain on crystal orientation and device geometry is investigated.
  • Combining density functional theory and tight-binding method, the realistic strain effects and confinement on both
    electrons and holes are described.
  • The full quantum electron/hole transport characteristics of MOSFET devices utilizing practical strain effects are investigated by employing non-equilibrium Green’s function.


  • Journal
        3. Hyo-Eun Jung and Mincheol Shin, "Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect 
            transistors: A first-principles study," Nanotechnology, vol. 29, 025201, 2017
        2. Hyo-Eun Jung and Mincheol Shin, "Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire 
            field effect transistors," Journal of Applied Physics, vol. 118, pp. 195703, 2015
        1. Hyo-Eun Jung and Mincheol Shin, "Surface roughness limited mean free path in silicon nanowire field effect transistors," 
            IEEE TED, vol. 60, no. 6, pp.1861-1866, 2013
  • Selected Conference
      11.  Mincheol Shin, Hyo-Eun Jung, and Sungwoo Jung,"First-principles based quantum transport simulations of nanoscale 
             field effect transistors," IEDM 2017, San Francisco, USA, 2017
      10. Mincheol Shin and Hyo-Eun Jung,  "First-principles based simulations of Si ultra-thin-body FETs with SiO2 gate 
            dielectric",  IWCN, Windermere, United Kingdom, 2017
        9. Byung-Hyun Kim, Seungchul Kim, Hyo-Eun Jung, YongChae Chung, Mincheol Shin, and Kwang-Ryeol Lee, "Multi-scale 
            approach for roughness effects of Si-SiO2 nanowire interface on electronic transport," ICCP, Singapore, 2015
        8. Mincheol Shin and Hyo-Eun Jung, "Quantum simulations of silicon nanowire field effect transistors: surface roughness 
            and strain effects," ISPSA, Jeju, Korea, 2014
        7. Junbeom Seo, Pooja Srivastave, Jaehyun Lee, Hyo-Eun Jung, Seungchul Kim, Kwang-Ryeol Lee, and Mincheol Shin,                     "Effects of strain for nanowire schottky barrier p-MOSFETs," ISPSA, Jeju, Korea, 2014
        6. Hyo-Eun JungWoo Jin Jeong, and Mincheol Shin, "A Study of performance enhancement in uniaxial stressed silicon 
            nanowire field effect transistors," SISPAD, Yokohama, Japan, 2014
        5Hyo-Eun Jung and Mincheol Shin, "NEGF approach to surface roughness limited mean free path in silicon nanowire FETs,"             NMDC, Tainan, Taiwan, 2013
        4. Hyo-Eun Jung and Mincheol Shin, "Full quantum simulations of silicon schottky barrier nanowires with surface roughness 
            scattering," NanoKorea, 2013
        3. Hyo-Eun Jung and Mincheol Shin, "Surface roughness effects in schottky barrier tunneling transistors: comparative study 
            against ohmic contact devices," KCS, 2012
        2.  Byung-Hyun Kim, Hyo-Eun Jung, Yong-Chae Chung, Mincheol Shin, and Kwang-Ryeol Lee, "Multi-scale simulation of 
             interfacial roughness effects in silicon nanowire," SISPAD, Denver, USA, 2012
        1. Hyo-Eun Jung and Mincheol Shin, "Non-equilibrium Green's function approach to surface-roughness-limited mobility in 
            silicon nanowire field effect transistors," KCS, 2011