conference
International Conference
116. "Efficient machine-learning-based optimization of 3-nm node nanosheet FETs," Bokyeom Kim, and Mincheol Shin, IWCN2021, Daejeon, Korea, 2021
115. "Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access Memory with Damping Constant Variation," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, MMM, Virtual conference, 2020
114. "Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Acess Memory," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, SISPAD, Virtual conference, 2020
113. "Effect of Atomic Interface on Tunnel Barrier in Ferroelectric HfO2 Tunnel Junctions," Junbeom Seo and Mincheol Shin, SISPAD, Virtual conference, 2020
112. "Simulation Study of Shape Deformation Effect in Spin-Orbit-Torque Magnetic Random Access Memory," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, Nano Korea 2020, Kintex, Ilsan, Korea, 2020.
111. "High Power Spin Torque Nano-Oscillators Integrated Directly on a MOSFET," Doo Hyung Kang, Woo Jin Jeong, Jaehyun Lee, and Mincheol Shin, MMM 2019, Las Vegas, USA, 2019.
110. "First-Principles Study on the Performance of Hafnia-Based Ferroelectric Tunnel Junction with Symmetric Electrodes," Junbeom Seo and Mincheol Shin, ICAE, Jeju, Korea, 2019.
109. “Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs”, Hyeongu Lee, Junbeom Seo, and Mincheol Shin, SISPAD, Udine, Italy, 2019.
108. “Effect of Trap on Carrier Transport in InAs FET with Al2O3 Oxide: DFT-based NEGF Simulations”, Mincheol Shin, Yucheol Cho and Seong Hyeok Jeon, SISPAD, Udine, Italy, 2019.
107. "Device Performance of MXene FETs," Bokyeom Kim and Mincheol Shin, AWAD, Busan, Korea, 2019.
106. Simulation of Strain-Assisted Switching in Antiferromagnetically Coupled Synthetic Free Layer-Based Magnetic Tunnel Junction," Seongcheol Noh and Mincheol Shin, Nano Korea 2019, Kintex, Ilsan, Korea, 2019.
105. "Atomistic Simulation of GaSb/InAs Ultra-thin-body Tunnel FETs", Yucheol Cho and Mincheol Shin, Nano Korea 2019, Kintex, Ilsan, Korea, 2019.
104. "Quantum Transport Simulations of Gate-all-around Nanowire pFETs with Arbitrary Shaped Cross-section in the Presence of Hole-phonon Interaction", Hyeongu Lee and Mincheol Shin, International Workshop on Computational Nanotechnology (IWCN) 2019, Evanston, IL, USA, 2019.
103. "An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures," Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, IWCN2019, Evanston, IL, USA, 2019
102. "DFT Hamiltonian Based Simulation of GaSb UTB-FET with Spin Orbit Coupling Effect," Seong Hyeok Jeon, Yoon Hee Chang, Junbeom Seo, and Mincheol Shin, Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2018, Hawaii, USA, 2018.
101. "A Variability Study of Ferroelectric Tunnel Junction," Junbeom Seo, Seong Hyeok Jeon, Mincheol Shin, Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2018, Hawaii, USA, 2018.
100. "Biaxial Strain based Performance Modulation of Negative-Capacitance FETs", Moonhoi Kim, Junbeom Seo, and Mincheol Shin, SISPAD, Austin, TX, USA, 2018.
99. "Quantum transport simulation of nanowire resonant tunneling transistors based on Wigner transport equation", Joon-Ho Lee and Mincheol Shin, Nano Korea 2018, Kintex, Ilsan, Korea, 2018.
98. "Injection locking of antiferromagnetic spin Hall nano-oscillators to a microwave current", Doo Hyung Kang and Mincheol Shin, Nano Korea 2018, Kintex, Ilsan, Korea, 2018.
97. "Asymmetrically oxidized interface layer effect of HfO2-based ferroelectric tunnel junctions", Moonhoi Kim, Junbeom Seo, and Mincheol Shin, Nano Korea 2018, Kintex, Ilsan, Korea, 2018.
96. "Theoretical study of strain-assisted synthetic anti-ferromagnetic layer based magnetic tunnel junction switching", Seongcheol Noh, Doo Hyung Kang, Mincheol Shin, ISPSA, Jeju, Korea, 2018.
95. "First-principles based quantum transport simulations of nanoscale field effect transistors," Mincheol Shin, Hyo-Eun Jung, and Sungwoo Jung, IEDM 2017, San Francisco, USA, 2017.12.4. - 12.6 (invited)
94. "First principles based NEGF simulations of low dimensional semiconductor devices," Mincheol Shin, SISPAD 2017 Workshop, Kamakura, Japan, 2017. 9. 6 (invited)
93. "Performance investigation of uniaxially strained phosphorene n-MOSFETs", Sungwoo Jung, Junbeom Seo, Seonghyun Heo, and Mincheol Shin, SISPAD, Kamakura, Japan, 2017.
92. ''Synchronization by electrical coupling of parallel-connected spin torque nano-oscillators", Doo Hyung Kang and Mincheol Shin, Nano Korea 2017, Kintex, Ilsan, Korea, 2017.
91. "Wigner transport simulation of nanowire resonant tunneling diodes", Joon-Ho Lee and Mincheol Shin, AWAD, Gyeongju, Korea, 2017.
90. "High power spin torque nano-oscillators directly integrated on a MOSFET: Serially connected spin torque nano-oscillators", Doo Hyung Kang, Woo Jin Jeong, Jaehyun Lee, and Mincheol Shin, AWAD, Gyeongju, Korea, 2017.
89. "First-principles based simulations of Si ultra-thin-body FETs with SiO2 gate dielectric", Mincheol Shin and Hyo-Eun Jung, IWCN, Windermere, United Kingdom, 2017.
88. "Effects of Uniaxial Strain on Phosphorene Tunneling Field-Effect Transistors", Junbeom Seo, Sungwoo Jung, and Mincheol Shin, IWCN, Windermere, United Kingdom, 2017.
87. "DFT-based NEGF simulations of nanoscale FETs," Mincheol Shin, The 2nd OpenMX developer's meeting, Daejeon, Korea, 2016.11.23-25 (invited)
86. "First Principles Based NEGF Simulations of Si Nanowire FETs", Mincheol Shin, Woo Jin Jeong, and Junbeom Seo, SISPAD, Nuremberg, Germany, 2016. (Best Poster Award)
85. "Efficient TB-NEGF Simulations of Ultra-Thin Body Tunnel FETs", Woo Jin Jeong, Junbeom Seo, and Mincheol Shin, SISPAD, Nuremberg, Germany, 2016.
84. "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors", Yongsoo Ahn and Mincheol Shin, International Vacuum Congress, Busan, Korea, 2016.
83. "Efficient atomistic simulation of InAs ultra-thin body tunnel FETs based on the TB-NEGF method", Woo Jin Jeong, and Mincheol Shin, Nano Korea, Seoul, Korea, 2016. (Best Poster Award)
82. "Quantum transport simulation of a cylindrical multishell Silicon-Nanowire Transistor based on Wigner transport equation", Joon Ho Lee, Woo Jin Jeong, and Mincheol Shin, Nano Korea, Seoul, Korea, 2016.
81. "Comparison study between Wigner equation and Schrodinger equation by investigating an interaction between a Gaussian wave packet and a non-reflecting potential", Joon-Ho Lee, and Mincheol Shin, ISPSA, Jeju, Korea, 2016.
80. "Magnetic Tunnel Junction-Based Spin-Torque Oscillator Simulation NEGF-LLGS Approach", Seongcheol Noh, Joon-Ho Lee, and Mincheol Shin, ISPSA, Jeju, Korea, 2016.
79. "A Study of Performance in Biaxially Strained Single-Layer Black Phosphorus FET", Junbeom Seo, Jaehyun Lee, Jung hyun Oh, and Mincheol Shin, AWAD, Hakodate, Japan, 2016
78. "Review of Boundary Conditions and Discretization Schemes for the Solution of Wigner Transport Equation", Joon-Ho Lee, Mincheol Shin, and Ting-wei Tang, 1st International Wigner Workshop in conjunction with ISANN 2015, Hawaii, USA, 2015
77. "Calculation of Phonon Transmission in Si/PtSi Heterostructures", Jung Hyun Oh, Moon-Gyu Jang, and Mincheol Shin, IWCE-18, West Lafayette, Indiana, USA, 2015
76. "Reduction in the thermal conductivity of PtSi/Si laminated structures", W. Choi, J. Kim, T. Kim, S. Moon, M. Shin, S. Lee, Nano Korea, Korea, 2015
75. "Thermal conductivity measurement of silicon/silicide laminated structures by 3w method", W. Choi, J. Kim, S. Kim, T. Kim, H. Jung, M. Jang, T. Jung, E. Nam, S. Moon, M. Shin, S. Lee, EMRS, France, 2015
74. "Comparision on the Temperature Dependence of Performances of NCFETs and Conventional MOSFETs", Junbeom Seo, Jaehyun Lee and Mincheol Shin, AWAD, Jeju, Korea, 2015
73. "Analysis of Magnetization Reversal in magnetic Tunnel Junctions with Self-consistent Calculation", Seongcheol Noh and Mincheol Shin, AWAD, Jeju, Korea, 2015
72. "Performance Comparison between Silicon and Transistion Metal Dichalcogenide Field-Effect Transistors", Yongsoo Ahn and Mincheol Shin, AWAD, Jeju, Korea, 2015
71. "Multi-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport", Byung-Hyun Kim, Seungchul Kim, Hyo-Eun Jung, YongChae Chung, Mincheol Shin, and Kwang-Ryeol Lee, ICCP-9, Singapore, 2015.
70. "Simulation Platform of Nano-devices as the Virtual Fab", Minho Lee, Seungchul Lee, Mincheol Shin, and Kwang-Ryeol Lee, ICCP-9, Singapore, 2015.
69. "Device simulation based on DFT-NEGF using equivalent transport model", Woo Jin Jeong, Jaehyun Lee, Seungchul Kim, Kwang-Ryeol Lee, and Mincheol Shin, ICCP-9, Singapore, 2015.
68. "Multiscale simulation of Schottky barrier tunnel transistors", Mincheol Shin, Pooja Srivastava, Junbeom Seo, Jaehyun Lee, Seungchul Kim, and Kwang-Ryeol Lee, ICCP-9, Singapore, 2015 (invited).
67. "Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate", Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon, Mincheol Shin, and Seok Hee Lee, ISPSA, Jeju, Korea, 2014.
66. "Effects of Strain for Nanowire Schottky Barrier p-MOSFETs", Junbeom Seo, Pooja Srivastave, Jaehyun Lee, Hyo-Eun Jung, Seung chul Kim, Kwang-Ryeol Lee, and Mincheol Shin, ISPSA, Jeju, Korea, 2014 .
65. "Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects", Mincheol Shin and, Hyo-Eun Jung, ISPSA, Jeju, Korea, 2014 (Invited).
64. "Tuning the Schottky barrier height at silicide/silicon interfaces: An ab-initio study" Pooja Srivastava, Mincheol Shin, Kwang-Ryeol Lee, and Seungchul Kim, ENGE, Jeju, Korea, 2014 .
63. "A Study of Performance in Uniaxial Stressed Silicon Nanowire Field Effect Transistors", Hyo-Eun Jung, Woo Jin Jeong, and Mincheol Shin, SISPAD, Yokohama, Japan, 2014.
62. "Thermoelectric characteristics of silicon/silicide hetero-junction structured thermoelectric modules", Wonchul Choi, Taehyoung Zyung, Soojung Kim, Hyojin Jeon, Mincheol Shin, and Moongyu Jang, Nano-Korea, Seoul, Korea, 2014.
61. "Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior", Jaehyun Lee, Doo Hyung Kang, Woo Jin Jeong, and Mincheol Shin, Nano-Korea, Seoul, Korea, 2014.
60. "Performance Boosters for Nanoscale Schottky Barrier MOSFETs: Computational Study",Mincheol Shin, AWAD, Kanazawa, Japan, 2014. (Invited)
59. "Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs", Jaehyun Lee, Woo Jin Jeong, Doo Hyung Kang, and Mincheol Shin, SNW, Hawaii, USA, 2014.
58. "Dual-Material Gate Schottky Barrier UTB DG MOSFETs with Ge and III-V Channel", Wonchul choi, Jaehyun Lee, and Mincheol Shin, SNW, Hawaii, USA, 2014.
57. "Thermal conductivity of ultrathin Si films with a periodic pore pattern", W. Choi, J. H. Oh, M. G. Jang, and M. Shin, IWCE-17, Paris, France, 2014.
56. "Simulation study of ballistic hole current in p-type Germanium nanowire MOSFET", Ju-Young Jung, Hoon Ryu, and Mincheol Shin, Nano-Korea, Coex, Korea, 2013.
55. "Full quantum simulations of silicon schottky barrier nanowires with surface roughness scattering", Hyo-Eun Jung,Mincheol Shin, Nano-Korea, Coex, Korea, 2013.
54. "Characteristics of silicon/silicide hetero-junction structured thermoelectric devices", Wonchul Choi, Taehyoung Zyung, Dongseok Jeon, Jaehyeon Kim, Soojung Kim, Hyojin Jeon, Mincheol Shin, and Moongyu Jang, Nano-Korea, Coex, Korea, 2013.
53. "Thermopower of Si nanowires under strong impurity scattering", J. H. Oh, M. Shin, and M. G, Jang, EDISON-18, Matsue, Japan, 2013.
52. "Quantum Simulation of III-V Double Gate Schottky Barrier MOSFETs", Jaehyun Lee, Yo Lum Lee, Ho Won Choi, and Mincheol Shin, IWCE-16, Nara, Japan, 2013.
51. "Phonon scattering at the interface between elastically dissimilar materials", J. H. Oh, M. G, Jang, and M. Shin,IWCE-16, Nara, Japan, 2013.
50. "Thermoelectric effect of silicide and silicon hetero-junction structured devices",Wonchul Choi, Taehyoung Zyung, Dongseok Jeon, Jaehyeon Kim, Soojung Kim, Hyojin Jeon, Mincheol Shinand Moongyu Jang, e-MRS, Strassbourgh, France , 2013.
49. "Effect of silicide/silicon hetero-junction structure on thermoelectricity", Wonchul Choi, Young-Sam Park, Younghoon Hyun, Taehyoung Zyung, Jaehyun Kim, Soojung Kim, HyojinJeon, Mincheol Shin, and Moongyu Jang, Nano-Korea, Coex , Korea, 2012.
48. "The thermoelectric properties of silicide/silicon hetero-junction structure", Wonchul Choi, Young-Sam Park, Younghoon Hyun, Taehyoung Zyung, Jaehyun Kim, Soojung Kim, HyojinJeon, Mincheol Shin, and Moongyu Jang, ENGE, Jeju, 2012.
47. "Importance of ionized impurity scattering on resistivity of Si nanowires", J. H. Oh, M. Shin, and S,-H, Lee,IWCE-15, Madison, USA, 2012.
46. "Multi-subband Monte Carlo Simulations of Hole Mobility in Silicon Nanowire FETs",Hoon Ryu, Ju-Young Jung,Mincheol Shin, IWCE-15, Madison, USA, 2012.
45. "Multi-scale Simulation of interfacial roughness effects in Silicon Nanowires", Byung-Hyun Kim, Hyo-Eun Jung, Yong-Chae Chung, Mincheol Shin, and Kwang-Ryeol Lee, SISPAD 2012, Denver, USA, 2012.
44. "Co-tunneling effects on transport in the spin blockade regime", J. H. Oh, V. Bubanja, M. Shin, and S,-H. Lee,IEEE Nano, Portland, USA, 2011.
43. "Quantum-classicla crossover in biaxial nanospin system", Doo Hyung Kang, Gwang-Hee Kim, and Mincheol Shin , Nano-Korea, Ilsan, 2011.
42. "Quantum Transport of Holes in Nanoscale FETs: Dependence on Channel Orientation and Impact of Heavy-hole Light-hole Coupling", Mincheol Shin , ACCMS-WGM 2011, Jeju, 2011. (invited)
41. "Quantum Transport in Nanowire p-type SchottkyBarrier MOSFETs with the k·p Method", Mincheol Shin , IWCE-14, Pisa, Italy. 2010.
40. "Gate Leakage Current in Double-gate MOSFETs with Si/SiO2 Interface Model from First Principle Calculations", Yongjin Park, Ki-jeong Kong, Hyunju Chang, and Mincheol Shin , IEEE-NANO 2010, Seoul, Korea, 2010.
39. "Quantum mechanical simulation of hole transport in p-type Si schottky barrier MOSFETs",Wonchul Choi ,Mincheol Shin, NANO-KOREA 2010, Ilsan, Korea, 2010
38. "Device Characteristics of Double-Gate MOSFETs with Si-Dielectric Interface Model from First Principle Calculations", Yongjin Park, Ki-jeong Kong, Hyunju Chang, Mincheol Shin , SNW 2010 (Honolulu, USA, 2010.06.13)
37. "NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k·p method", Mincheol Shin , IWCE-13, Beijing, China. 2009.
36. "k.p Based Quantum Simulation of Silicon Nanowire pMOSFETs", Mincheol Shin , Sunhee Lee, and Gerhard Klimeck, IEEE-NANO 2009, Genoa, Italy, 2009.
35. "Effects of Multiple-Gates and Contacts in Nanowire and Nanotube Field Effect Transistors", Mincheol Shin ,IWCE-12, Amherst, USA, 2008.
34. "Quantum Device Simulations of Nanowire Field Effect Transistors," Mincheol Shin , ACCMS-7. 2007 (invited).
33. "Three dimensional atomistic quantum simulation of Carbon nanotube Field effect transistors", Mincheol Shin ,IEEE-NANO 2007, Hong Kong, China, 2007.
32. "Quantum Simulation of Nanoscale Metal/Insulator Tunnel Transistors", Mincheol Shin , SSDM 2005, Kobe, Japan (2005. 9. 12. - 2005. 9. 15.)
31. "Ballistic Quantum Transport in Nano-scale Schottky Barrier Tunnel Transistors", Chi-yui Ahn and Mincheol Shin ,IEEE-NANO 2005, Nagoya, Japan (2005. 7. 11. - 7. 15.).
30. "Device Characteristics Of Nanoscale Metal/Insulator Tunnel Transistors In The Ballistic Quantum Transport Regime", Mincheol Shin , China-Nano 2005, Beijing, China (2005. 6. 8. - 6. 10.)
29. "Quantum simulation of nano-scale Schottky barrier MOSFETs", Mincheol Shin , Moongyu Jang, and Seongjae Lee, IEEE-NANO 2004, Munich, Germany (2004. 8. 16. - 8. 19.)
28. "Quantum mechanical simulation of charge distribution in Schottky barrier MOSFETs", Mincheol Shin , Moongyu Jang, and Seongjae Lee, ISPSA-2004, Kyoung-Ju (2004. 3. 14. - 3. 16.)
27. "Neural Network Synapse Device Using Single-Electron Tunnel Junctions", Mincheol Shin , IEEE-NANO 2003, San Francisco (2003. 8. 12. - 8. 14.)
26. "Coulomb Blockade Oscillations in Coupled Single-Electron Transistors," Mincheol Shin , Seongjae Lee, Kyoung Wan Park, ICSMM2000, Kyoung-Ju (2000. 9. 24. - 9.27.)
25. "Cotunneling Effects in Single-Electron Device Using Coupled Multiple-Tunnel Junction Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, TNT2K, Toledo, Spain (2000. 10. 16. - 10. 20.)
24. "Multiple Coulomb Gaps in Two-Dimensional Quantum Dot Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, APS March Meeting, Los Angeles, USA (1998. 3. 16. ~ 3. 20.)
23. "Multiple Coulomb Blockade Gaps in Small Tunnel Junction Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, ICSMM-11 (11th International Conference on Superlattices, Microstructure, and Microdevices), Hurgada, Egypt (1998. 7. 27. ~ 8. 1.)
22. "Electrical Transport Properties of Chain-Shaped Tunnel-Junction Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, SQS (International Workshop on Physics and Applications of Semiconductor Quantum Structures), 서귀포 (1998. 10. 19. - 10. 23.)
21. "Quantum Transport due to a Reflection Grating in a Quantum Wire", Kyoung-Wan Park, Seongjae Lee,Mincheol Shin , El-Hang Lee, Jongseol Yuk, and Hyuk Chan Kwon, APS March Meeting, Kansas City, USA (1997. 3. 17. ~ 3. 21.)
20. "Edge Current in the Equilibrium Quantum Hall State," Seongjae Lee, Hyuk Chan Kwon, Kyoung Wan Park,Mincheol Shin , Jongseol Yuk, El-Hang Lee, APS March Meeting, Kansas City, USA (1997. 3. 17. ~ 3. 21.)
19. "Room Temperature Investigation of Single Electron Tunneling (SET) Effects in Ag Droplets Grown on The Passivated Silicon Surface", Kang-Ho Park, Jeong Sook Ha, Wan Soo Yun, Mincheol Shin , Kyoung-Wan Park, and El-Hang Lee, STM, Hamburg, Germany (1997. 7. 21. ~ 7. 25.)
18. "Single Electron Charging Effect at Ag Droplets Grown on Sb-terminated Silicon Surface at Room Temperature", Kang-Ho Park, Jeong Sook Ha, Mincheol Shin , Wan Soo Yun, and El-Hang Lee, AVS (Americal Vaccum Society), San Jose, USA (1997. 10. 20. ~ 10. 24.)
17. "Backscattering Effects on the Aharonov-Bohm-type Interference Patterns in the Ballistic Limit", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, ICSMM-10 (10th International Conference on Superlattices, Microstructure, and Microdevices), Lincoln, USA (1997. 7. 8 ~ 7. 11.)
16. "Charge-solitons in Closed One-dimensional Tunnel Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, ICSMM-10, Lincoln, USA (1997. 7. 8 ~ 7. 11.)
15. "Soliton dynamics in Closed Two-dimensional Tunnel Junction Arrays", Mincheol Shin , Seongjae Lee, Kyoung Wan Park, and El-Hang Lee, NPE'97 (Nano-Physics and Electronics, '97), Tokyo, Japan (1997. 9. 18. ~ 9. 20.)
14. "Magnetic Field Dependence of the Resistance Anomaly in Superconducting Mesoscopic Aluminum Structures", Seongjae Lee, Kyoung Wan Park, Mincheol Shin , El-Hang Lee, and Hyuk Chan Kwon, NPE'97, Tokyo, Japan (1997. 9. 18. ~ 9. 20.)
13. "Quantum Transport of a Quantum Wire With a Reflection Grating", Seongjae Lee, Kyoung-Wan Park, Mincheol Shin , El-Hang Lee, Jongseol Yuk, and Hyuk Chan Kwon, IWPSD-97, New Delly, India (1997. 12.)
12. "Electron Diffraction due to a Reflection Grating in a Quantum Wire", Kyoung-Wan Park, Seongjae Lee,Mincheol Shin , Jongseol Yuk, Hyuk Chan Kwon, and El-Hang Lee, IWPSD, New Delly, India (1997. 12.)
11. "Strong Dependence of the Multichannel Ballistic Transport on the Geometrical Symmetry," Mincheol Shin , Kyoung Wan Park, Seongjae Lee, and El-Hang Lee, ICSMM-9 (9th International Conference on Superlattices, Microstructures and Microdevices), Liege, Belgium (1996. 7. 14. - 7. 19.).
10. "New h/e Oscillations and Electrostatic Aharonov-Bohm Effect in an AlGaAs/GaAs-Based Mesoscopic Ring Structure," Kyoung Wan Park, Seongjae Lee, Mincheol Shin , El-Hang Lee, EP2DS-11 (11th Conference on Electronic Properties of Two Dimensional Systems), Nottingham, U.K. (1995. 8. 7. ~ 8. 11.).
9. "Two Different Types of h/e-Oscillations in an AlGaAs/GaAs-based Mesoscopic Ring Structure," Seongjae Lee, Kyoung Wan Park, Mincheol Shin , El-Hang Lee, ISCS-22 (22nd International Symposium on Compound Semiconductors), Cheju Island, Korea (1995. 8. 28. ~ 9.2.).
8. "Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate," Mincheol Shin , Seongjae Lee, Kyoung Wan Park, El-Hang Lee, MPE95 (Mesoscopic Physics and Electronics), Tokyo, Japan (1995. 3. 6. ~ 3. 8.).
7. "Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs 2DEG Wire Structures," Kyoung Wan Park, Seongjae Lee, Mincheol Shin , El-Hang Lee, Hyuk Chan Kwon, MPE95, Tokyo, Japan (1995. 3. 6. ~ 3. 8.).
6. "Quantum Transport in Mesoscopic Aluminum Wires," Seongjae Lee, Kyoung Wan Park, Mincheol Shin , El-Hang Lee, Hyuk Chan Kwon, MPE95, Tokyo, Japan (1995. 3. 6. ~ 3. 8.).
5. "Conductance Oscillations in a Corrugated Gate AlGaAs/GaAs 2DEG Transistor Structures," Kyoung Wan Park, Seongjae Lee, Mincheol Shin , El-Hang Lee, Hyuk Chan Kwon, LDSD95 (Low Dimensional Structures and Devices), Singapore (1995. 5.).
4. "Anomalous Negative Magnetoresistance in Mesoscopic Aluminum Wires," Seongjae Lee, Kyoung Wan Park,Mincheol Shin , El-Hang Lee, Hyuk Chan Kwon, LDSD95, Singapore (1995. 5.).
3. "Quantum Transport in an H-Shaped Wire and a Ring Structure," Mincheol Shin , Seongjae Lee, Kyoung Wan Park, El-Hang Lee, ICSMM-7, Banff, Canada (1994. 8. 22. ~ 8. 26.).
2. "NH3-Plasma Treatment oF GaAs Surface at High Temperature in Remote Plasma and Direct Plasma Reactor," Kyoung Wan Park, Seongjae Lee, Mincheol Shin , El-Hang Lee, Material Research Society Symposium Proceedings, 318, 533-537 (1994).
1. "Multiple Negative Transconductances in an Indented Gate AlGaAs/GaAs Modulation Doped Field Effect Transistor," Kyoung Wan Park, Seongjae Lee, Mincheol Shin , El-Hang Lee, Hyuk Chan Kwon, SSDM94 (International Conference on Solid State Devices and Materials), Yokohama, Japan (1994. 8. 23 ~ 8. 26.).