Yongsoo Ahn

Yongsoo Ahn



    • 2019. 09 ~ present : Samsung Electronics

  • 2014. 09 ~ 2019. 08 : KAIST, Ph. D, Electrical Engineering

  • 2012. 02 ~ 2014. 08 : KAIST, MS, Electrical Engineering

  • 2005. 03 ~ 2012. 02 : Sungkyunkwan University, BS, Electronic & Electrical Engineering

  • 2002. 03 ~ 2005. 02 : Changwon Yongho High School


First-principles-based quantum transport simulations of 2D semiconductor FETs

  • 2D Semiconductors

    • Layered structure, weak inter-layer interaction (Van der Waals), strong intra-layer interaction (covalent)

    • Non-zero bandgap, high mobility in nanoscale dimension (uniform surface)

    • Example: transition metal dichalcogenides, black phosphorus, metal monochalcogenide

  • Simulation approach

    • Device modeling: equilibrium DFT Hamiltonian

      • Device is modeled in atomistic level via density functional theory (DFT) simulations.

      • Equilibrium DFT Hamiltonians are extracted.

    • Quantum transport simulation: self-consistent calculation between NEGF - Poisson

      • The extracted DFT Hamiltonians are imported into our in-house tool that calculates non-equilibrium Green's function (NEGF) and solves Poisson equation.

Other Research Interests

  • Quantum transport simulation with consideration of issues in digital IC (e.g., dark silicon, thermal issue, etc.)


  • Journal

    1. Yongsoo Ahn and Mincheol Shin, "First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit," IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2129 - 2134, May 2017. (Link)

    2. Yongsoo Ahn and Mincheol Shin, "Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors," IEEE Journal of the Electron Devices Society, vol. 7, pp. 668 - 676, Jun. 2019. (Link).

  • Selected Conference

      1. Yongsoo Ahn and Mincheol Shin, "Performance Comparison between Silicon and Transition Metal Dichalcogenides Field-Effect Transistors," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Jeju, Republic of Korea, Jun. 2015.

      2. Yongsoo Ahn, Sangchun Park, and Mincheol Shin, "First-Principles-based Quantum Transport Calculations of 2D Material Field-Effect Transistors," Korean Conference on Semiconductors (한국 반도체학술대회), Jeongseon, Republic of Korea, Feb. 2016.

      3. Yongsoo Ahn and Mincheol Shin, "First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors," International Vacuum Congress 20 (IVC-20), Busan, Republic of Korea, Aug. 2016.

      4. Yongsoo Ahn, Bokyeom Kim, and Mincheol Shin, "An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterojunctions," International Workshop on Computational Nanotechnology (IWCN), Evanston, IL, USA, May 2019.