Jihun Byun

Jihun Byun

  byunji@kaist.ac.kr

 Education

• • 2021 ~ present : Samsung Electronics

  • 2019 ~ 2021 : KAIST, MS, Electrical Engineering

  • 2013 ~ 2019 : Ajou University, BS, Electrical and Computer Engineering

Research

Other Research interests

Publication

• Journal

1. "Switching performance comparison between conventional SOT and STT-SOT write schemes with effect of shape  deformation," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, AIP Advances, Mar. 2021.

• Selected Conference

  • 1. "Spacer Engineering of Double Gate MOSFET: Performance Study Based on Quantum Transport Simulations" 변지훈, 이현구, 신민철, 제 27회 반도체 학술대회, 정선, 2020.

  • 2. "Simulation Study of Shape Deformation Effect in Spin-Orbit-Torque Magnetic Random Access Memory," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, Nano Korea 2020, Kintex, Ilsan, Korea, 2020.

  • 3.  "Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Acess Memory," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, SISPAD, Virtual conference, 2020

  • 4. "Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access Memory with Damping Constant Variation," Jihun Byun, Doo Hyung Kang, and Mincheol Shin, MMM, Virtual conference, 2020

• Patent