Moonhoi Kim

Moonhoi Kim

 moonhoi@kaist.ac.kr

 Education

• • 2019 ~ present : SK hynix

  • 2017 ~ 2019     : KAIST, MS, Electrical Engineering

• 2013 ~ 2017     : University of Seoul, BS, Electrical and Computer Engineering 

• 2008 ~ 2011     : Jeonju Sangsan High School

Research

Other Research interests

Publication

• Journal

• Selected Conference

1. "New Non-volatile Multi-level Cell Using Epitaxial Strain Effect and Double Ferroelectric Tunnel Junctions", 김문회, 서준범, 신민철, 제 25회 반도체 학술대회, 정선, 2018.

2. "A Simulation Study on Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions", 서준범, 김문회, 신민철, 제 25회 반도체 학술대회, 정선, 2018.

3. "Asymmetrically oxidized interface layer effect of HfO2-based ferroelectric tunnel junctions", Moonhoi Kim, Junbeom Seo, and Mincheol Shin, Nano Korea 2018, Kintex, Ilsan, Korea, 2018.

4. "Biaxial Strain based Performance Modulation of Negative-Capacitance FETs", Moonhoi Kim, Junbeom Seo, and Mincheol Shin, SISPAD, Austin, TX, USA, 2018.

• Patent